METHOD FOR FABRICATING I -III-VI2 COMPOUND THIN FILM USING SINGLE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION PROCESS
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United States of America Patent
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Issued Date -
Apr 22, 2010
app pub date -
Feb 22, 2008
filing date -
Mar 13, 2007
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Abandoned
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Abstract
Disclosed herein is a method for producing a 1-IH-VI2 compound thin film on a substrate through a single Metal Organic Chemical Vapor Deposition (MOCVD) process, wherein a Group III element and Group VI element-containing single precursor, a Group I metal-containing precursor, and a Group VI element-containing precursor or a Group VI element-containing gas are concurrently supplied to a substrate and subjected to MOCVD to form a I-III-VI2 compound thin film on the substrate. The method employs a single deposition process to form the thin film and is thus provides a more economical, simplified process as compared to conventional methods. In addition, the method is capable of producing a thin film with an even surface and few or no inner pores, and, advantageously, is thus useful as a light-absorbing layer for a solar cell.
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