Non-volatilization semiconductor memory and the write-in method thereof
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United States of America Patent
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Issued Date -
Apr 22, 2010
app pub date -
Oct 20, 2009
filing date -
Oct 21, 2008
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Abandoned
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Abstract
Task: to decrease the number of times of the verifying process and shorten the time to program.Means for Solving the Problems: In a non-volatile semiconductor memory device, comprising: a non-volatile memory array, which stores multi-valued states by setting a plurality of different threshold voltages to correspond to a plurality of states to each memory cell; and a control circuit, which controls programming to the memory cell array, when increasing the programming voltage from a predetermined programming start voltage by a predetermined voltage increment gradually and verifying it at the same time for programming the memory cell, the control circuit determines and sets the programming start voltage for programming according to a programming pulse number at the moment the verifying process passes in the preceding programming.
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