HIGH STRESS FILM
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United States of America Patent
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Issued Date -
Apr 22, 2010
app pub date -
Oct 16, 2008
filing date -
Oct 16, 2008
priority date (Note) -
Abandoned
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Abstract
A semiconductor device that includes a substrate having an active region prepared with a transistor is presented. The semiconductor device includes a stress structure adjacent to the substrate. The stress structure includes a dielectric layer having nanocrystals embedded therein. The nanocrystals induce a first or a second stress on a channel region of the transistor which improves carrier mobility of the transistor.
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