APPARATUS AND METHOD FOR CONTACT FORMATION IN SEMICONDUCTOR DEVICES
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United States of America Patent
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Issued Date -
Apr 15, 2010
app pub date -
Oct 9, 2008
filing date -
Oct 9, 2008
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Abandoned
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Abstract
The present disclosure is directed to the preparation of a semiconductor substrate, and metallization of a contact area on the substrate to produce a contact in a semiconductor device. The method includes pre-treating the substrate by ultra fast laser treatment of a contact area, and depositing an interconnect metal layer on the contact area to create a contact. The process may include depositing a layer of dielectric-forming material on the substrate and removing a portion of the dielectric material from the substrate to reveal a contact area, prior to laser treating and metallization.
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