Importance

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Abstract

A method of integrated circuit simulation comprising the steps of providing a voltage lookup table having predetermined drain voltage data for a given transistor type, providing a voltage lookup table having predetermined gate voltage data for a given transistor type. Providing a temperature lookup table having predetermined temperature data. Providing a transistor lookup table having predetermined current and temperature data. Simulating operation of an integrated circuit by, for each transistor in the integrated circuit, determining a current value through the transistor in dependence upon one of the predetermined voltage data values and one of the predetermined temperature data values; and comparing the current value calculated to the current value obtained previously; and updating active transistor list detecting a change in the current value. Then incrementing a simulation time step and repeating simulation steps for all transistors. Simulating operation of an integrated circuit by, for each transistor in the integrated circuit, determining a transistor temperature value for all transistors in the active transistor list.

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First Claim