Method and System for Dispositioning Defects in a Photomask
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United States of America Patent
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Issued Date -
Apr 8, 2010
app pub date -
Jan 29, 2007
filing date -
Jan 29, 2007
priority date (Note) -
Abandoned
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Abstract
A method and system for dispositioning defects in a photomask are provided. A method for dispositioning defects in a photomask includes analyzing photomask topography data including data representing a design topology of at least a first photomask, the first photomask corresponding to a first layer in a photolithographic process. Based at least on the analysis, one or more safe regions of the first photomask are identified, each safe region corresponding to a region of the first layer insensitive to potential defects located in the first photomask.
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