Process for adjusting the size and shape of nanostructures

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United States of America Patent

PATENT NO 8163657
APP PUB NO 20100081282A1
SERIAL NO

12435219

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Abstract

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In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

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Patent Owner(s)

Patent OwnerAddress
CHOU STEPHEN YPRINCETON NJ 08540

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Stephen Y Princeton, US 247 5872
Liang, Xiaogan Plainsboro, US 15 143
Liang, Yixing Princeton, US 3 15
Wang, Ying Princeton, US 968 7243

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