METHOD FOR FABRICATING CONDUCTIVE PATTERN

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United States of America Patent

APP PUB NO 20100081273A1
SERIAL NO

12242850

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for fabricating a conductive pattern including following steps is provided. A first conductive layer is formed on a substrate. A patterned hard mask layer is formed on the first conductive layer. A portion of the first conductive layer is removed to expose a portion of the substrate by using the patterned hard mask layer as a mask. A dielectric layer covering the patterned hard mask layer is formed on the substrate. A portion of the dielectric layer is removed to expose the patterned hard mask layer. The patterned hard mask layer is removed to form an opening in the dielectric layer. A second conductive layer is formed in the opening.

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Patent Owner(s)

Patent OwnerAddress
POWERCHIP SEMICONDUCTOR CORPNO 12 LI-HSIN RD I SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yung-Ching Nantou County, TW 10 12
Hsieh, Jung-Yuan Hsinchu City, TW 4 3

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