WAFER INCLUDING INTERCEPTING THROUGH-VIAS AND METHOD OF MAKING INTERCEPTING THROUGH-VIAS IN A WAFER
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United States of America Patent
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Issued Date -
Mar 25, 2010
app pub date -
Sep 25, 2008
filing date -
Sep 25, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor device includes a substrate; a first via provided in the substrate extending from a first side of the substrate to a first depth into the substrate, the first depth being less than a thickness of the substrate and the first via having a first width in one direction; a first conductive material provided in the first via; a second via provided in the substrate extending from a second side of the substrate to a second depth into the substrate, the second via having a second width in one direction, the second width being greater than the first width; and a second conductive material provided in the second via so as to form an electrical connection with the first conductive material provided in the first via.
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