HETEROEPITAXIAL GALLIUM NITRIDE-BASED DEVICE FORMED ON AN OFF-CUT SUBSTRATE

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United States of America Patent

APP PUB NO 20100072484A1
SERIAL NO

12236438

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Abstract

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Embodiments include but are not limited to apparatuses and systems including a heteroepitaxial gallium nitride-based device formed on an off-cut substrate, and methods for making the same. Other embodiments may be described and claimed.

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Patent Owner(s)

Patent OwnerAddress
TRIQUINT SEMICONDUCTOR INC2300 NE BROOKWOOD PARKWAY HILLSBORO OR 97124

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chowdhury, Uttiya Plano, US 5 34
Jimenez, Jose Dallas, US 40 167

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