THERMOELECTRIC MATERIAL INCLUDING A FILLED SKUTTERUDITE CRYSTAL STRUCTURE

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United States of America Patent

SERIAL NO

12434299

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, where i) G includes at least two rare earth elements and an alkaline earth element, ii) M is cobalt, rhodium, or iridium, and iii) X is antimony, phosphorus, or arsenic. The subscript “y” refers to a crystal structure filling fraction ranging from about 0.001 to about 0.5.

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GM GLOBAL TECHNOLOGY OPERATIONS LLCP O BOX 300 MAIL CODE 482-C23-B21 DETROIT MI 48265-3000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bai, Shengqiang Shanghai, CN 5 23
Chen, Lidong Shanghai, CN 29 253
Shi, Xun Troy, US 24 602
Yang, Jihui Lakeshore, CA 36 469
Zhang, Wenqing Shanghai, CN 20 132

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