CAPACITANCE VARIATION DETECTION CIRCUIT AND SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 18, 2010
app pub date -
Feb 13, 2008
filing date -
Feb 26, 2007
priority date (Note) -
Abandoned
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Abstract
In a hybrid IC including, a semiconductor chip including a capacitance sensor and a semiconductor chip including a detection circuit for detecting a variation in capacitance, the number of bonding wires required between the chips is reduced. A rear surface of a sensor chip is connected to an electrode on a surface of a support substrate on which the sensor chip is mounted. A potential at one terminal of a capacitor of a sensor is set at a reference potential. A pad of another terminal is formed on a surface of the sensor chip. A detection circuit chip includes: a pad to serve as a connection terminal of the capacitor; a bias circuit connected to a terminal, for outputting a bias voltage to charge the capacitor; and a detection circuit connected to the terminal through a capacitor, for detecting a variation in potential of the terminal of the capacitor as an electrical signal. The chips are interconnected through a bonding wire between the pad of the terminal and the pad of the terminal.
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