METHOD FOR FORMING SILICON THIN FILM
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Oct 29, 2007
filing date -
Jan 19, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for forming a silicon thin film which can form a crystalline silicon thin film relatively at a low temperature, economically and productively is provided. A method for forming a silicon thin film which can provide a substrate for thin film transistor with a lowered leakage current is provided.Provided is a method for forming a silicon thin film in which a substrate S is exposed to plasma of a gas for hydrogen bonding process containing hydrogen, and a crystalline silicon thin film is then formed on the substrate. By employing as the substrate S a substrate in which the film formation target face is a nitrogen-containing gate insulating film formed on the substrate body, a substrate which can provide a thin film transistor having high electron mobility and low OFF-current can be obtained.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully