METHOD FOR TREATING SEMICONDUCTOR PROCESSING COMPONENTS AND COMPONENTS FORMED THEREBY
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United States of America Patent
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app pub date -
Sep 28, 2009
filing date -
Apr 15, 2003
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Abandoned
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Abstract
A semiconductor processing component can include SiC, wherein the semiconductor processing component has an impurity ratio less than 34:1. The impurity ratio can be a ratio of a first average impurity concentration to a second impurity level, wherein the first average impurity concentration is an average impurity concentration of a impurity from an exposed surface of the semiconductor processing component to a depth of 0.2 microns from the exposed surface, and the second average impurity concentration is an average impurity concentration of the impurity from a depth of 0.8 microns from the exposed surface to a depth of 1.0 micron from the exposed surface.
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