CMOS CIRCUITS COMBINING HIGH VOLTAGE AND RF TECHNOLOGIES
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United States of America Patent
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Issued Date -
Mar 11, 2010
app pub date -
Jun 27, 2007
filing date -
Jun 30, 2006
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Abandoned
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Abstract
A CMOS circuit comprises at least one high voltage transistor (having gate and drain operating voltages of greater than 8V) and at least one high frequency capable transistor (having a maximum switching frequency of between 100 MHz and 1000 GHz) wherein said transistors are integrated on the same semiconductor substrate so as to allow the simple integration of high voltage circuits and RF (radio frequency) CMOS circuits on the same integrated circuit.
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