NONVOLATILE MEMORIES WITH CHARGE TRAPPING DIELECTRIC MODIFIED AT THE EDGES
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United States of America Patent
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Issued Date -
Mar 11, 2010
app pub date -
Sep 10, 2008
filing date -
Sep 10, 2008
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Abstract
A nonvolatile memory cell has charge trapping dielectric (160) which has been modified (i.e. oxidized) adjacent to edges of blocking dielectric (180). The modification reduces the charge-trapping density adjacent to the edges of the blocking dielectric, and hence reduces the leakage current at the edges. Other features are also provided.
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