Methods of forming a photoresist-comprising pattern on a substrate
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United States of America Patent
Stats
-
Apr 2, 2013
Grant Date -
Mar 4, 2010
app pub date -
Aug 29, 2008
filing date -
Aug 29, 2008
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a photoresist-comprising pattern on a substrate includes forming a patterned first photoresist having spaced first masking shields in at least one cross section over a substrate. The first masking shields are exposed to a fluorine-containing plasma effective to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the first masking shields. A second photoresist is deposited over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating. The second photoresist which is in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating is exposed to a pattern of actinic energy and thereafter spaced second masking shields are formed in the one cross section which comprise the second photoresist and correspond to the actinic energy pattern. The first and second masking shields together form at least a part of a photoresist-comprising pattern on the substrate. Other embodiments are disclosed.
First Claim
Other Claims data not available
