SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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app pub date -
Jul 29, 2009
filing date -
Aug 27, 2008
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Abstract
Provided are a semiconductor device and a fabricating method thereof. The semiconductor device includes a substrate having a trench that defines an active region, an isolation layer that buries the trench, a pro-oxidant region formed at an upper corner portion of the trench to enhance oxidation at the upper corner portion of the trench when a gate insulation layer is grown on the active region, and a gate conductive layer formed on the gate insulation layer.
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