METHOD FOR PREPARING A SEMICONDUCTOR ULTRANANOCRYSTALLINE DIAMOND FILM AND A SEMICONDUCTOR ULTRANANOCRYSTALLINE DIAMOND FILM PREPARED THEREFROM

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Issued Date
Mar 4, 2010
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Feb 24, 2009
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Aug 28, 2008

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Abstract

through ion implantation, and annealing the doped UNCD film. A semiconductor UNCD film prepared from the method by using a nitrogen-containing gas as an ion source is also disclosed.

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Patent Owner	Address
TAMKANG UNIVERSITY	NO 151 YING-CHUAN ROAD TAMSUI DIST NEW TAIPEI CITY 25137

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
LIN, I-Nan	Taipei City, TW	16	88
TAI, Nyan-Hwa	Hsinchu, TW	27	49

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METHOD FOR PREPARING A SEMICONDUCTOR ULTRANANOCRYSTALLINE DIAMOND FILM AND A SEMICONDUCTOR ULTRANANOCRYSTALLINE DIAMOND FILM PREPARED THEREFROM

Number of patents in Portfolio can not be more than 2000

United States of America Patent

12391563

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12391563

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