METHOD FOR DETERMINING THE PERFORMANCE OF IMPLANTING APPARATUS
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United States of America Patent
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Issued Date -
Mar 4, 2010
app pub date -
Aug 26, 2008
filing date -
Aug 26, 2008
priority date (Note) -
Abandoned
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Abstract
A method for determining the performance of an implanting apparatus comprises the steps of forming a dopant barrier layer on a substrate, forming a target layer on the dopant barrier layer, performing an implanting process by using the implanting apparatus to implant dopants into the target layer such that the target layer becomes conductive, measuring at least one electrical property of the target layer, and determining the performance of the implanting apparatus by taking the electrical property into consideration. In one embodiment of the present invention, the dopant barrier layer is silicon nitride layer, the target layer is a polysilicon layer, and the electrical property is the sheet resistance of the conductive polysilicon layer.
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