METHOD OF FABRICATING A BIPOLAR TRANSISTOR
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United States of America Patent
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Issued Date -
Feb 25, 2010
app pub date -
Apr 24, 2006
filing date -
Apr 28, 2005
priority date (Note) -
Abandoned
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Abstract
The invention provides a method for fabricating a bipolar transistor applying a standard shallow trench isolation fabrication method to simultaneously form a vertical bipolar transistor (29) or a lateral bipolar transistor (49) in a first trench (5, 50) and a shallow trench isolation region (27, 270) in a second trench (7, 70). Further, the fabrication method may simultaneously form a vertical bipolar transistor (27) in the first trench (5, 50), a lateral bipolar transistor (49) in a third trench and a shallow trench isolation region (27, 270) in the second trench (7, 70).
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