SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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app pub date -
Oct 12, 2007
filing date -
Oct 13, 2006
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Abstract
Provided are a semiconductor device and a method of manufacturing the same. In semiconductor devices of the conventional technologies, the chip size is increased when a breakdown voltage is increased. In the semiconductor device of this invention, an end of a pn junction interface (5) of a collector region (2) and a base region (3) is formed of a mesa groove (6) made of a trench. Thus, the chip size is not increased even when the mesa groove (6) is deeply formed to increase the breakdown voltage.
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