SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Feb 18, 2010
app pub date -
Aug 5, 2009
filing date -
Aug 12, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. (1)N1>N2 (2)D1>D2 (3)Ec1
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