AG-BI-BASE ALLOY SPUTTERING TARGET, AND METHOD FOR PRODUCING THE SAME
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Oct 23, 2009
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May 16, 2003
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or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89 % or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis:)]/[Bi].Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
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