SEMICONDUCTOR LASER
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United States of America Patent
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Issued Date -
Feb 11, 2010
app pub date -
Aug 4, 2009
filing date -
Aug 6, 2008
priority date (Note) -
Abandoned
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Abstract
A semiconductor laser, which emits a laser beam from an edge surface of an active layer (5), is provided with a protective film (20), arranged on the edge surface from which the laser beam is emitted, and formed of a single-layer or a multilayer dielectric film. Hydrogen concentration distribution in the protective film (20) is approximately flat. The active layer (5) is formed of a group-III nitride semiconductor including Ga as a constituent element. The protective film (20) is formed of at least a first protective film (21) that is in direct contact with an edge surface of the active layer (5), and a second protective film (22) that is in contact with the first protective film (21). A ratio of hydrogen concentration of the first protective film (21) with respect to hydrogen concentration of the second protective film (22) is not less than 0.5 and not more than 2.
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