Method and apparatus for forming contact hole
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United States of America Patent
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Sep 24, 2009
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Mar 31, 2004
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Abstract
A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film includes etching the insulating film using reactive ion etching to a depth whereat the irregularity does not disappear, and sputter-etching by physically colliding Ar radicals produced by Ar gas plasma discharge onto the surface of the amorphous Si.
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