SEMICONDUCTOR WAFER CLEANING WITH DILUTE ACIDS
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United States of America Patent
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Issued Date -
Feb 4, 2010
app pub date -
Aug 1, 2008
filing date -
Aug 1, 2008
priority date (Note) -
Abandoned
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Abstract
In a method for cleaning wafers using ultra-dilute acids, the wafers are placed into a rotor in a process chamber. As the rotor spins, the wafers are with de-ionized water and ultra-dilute hydrofluoric acid. Ozone gas is introduced into the process chamber. The wafers are then sprayed with an ultra-dilute solution of hydrochloric acid. Ozone gas is purged from the chamber. The wafers are then rinsed and dried. The ultra-dilute acids may be used in water to acid concentrations on the order of about 1000-2400:1.
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