SEMICONDUCTOR LIGHT EMISSION DEVICE HAVING AN IMPROVED CURRENT CONFINEMENT STRUCTURE, AND METHOD FOR CONFINING CURRENT IN A SEMICONDUCTOR LIGHT EMISSION DEVICE
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United States of America Patent
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Issued Date -
Jan 28, 2010
app pub date -
Jul 22, 2008
filing date -
Jul 22, 2008
priority date (Note) -
Abandoned
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Abstract
A semiconductor light emission device is provided that has a current confinement region that comprises a diffusion accommodation layer located adjacent the active region. The diffusion accommodation layer comprises a material that has a higher bandgap than the bandgap of the material in the active region. Diffusion of dopants into portions of the diffusion accommodation layer forms p+/n junctions on each side of the p/n junction that exists in the active region. The material of the diffusion accommodation layer has a bandgap that is higher than the bandgap of the material of the active region, which ensures that the p+/n junctions turn on at a threshold voltage level that is higher than the threshold voltage level at which the p/n junction turns on. Because of this, the p+/n junctions are effectively turned off while the p/n junction is turned on, which causes the electrical current to be channeled away from the p+/n junctions and into the p/n junction, thereby confining the current to a particular area in the active region.
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