DYNAMIC RANDOM ACCESS MEMORY STRUCTURE

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United States of America Patent

APP PUB NO 20100012996A1
SERIAL NO

12174067

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A dynamic random access memory structure comprises a substrate having a first diffusion region and a second diffusion region, a dielectric structure overlaying the substrate, a capacitor contact plug disposed in the dielectric structure and connected to the first diffusion region, a bit-line contact plug disposed in the dielectric structure and connected to the second diffusion region, a metal silicide disposed on the capacitor contact plug, and a capacitive structure disposed on the dielectric structure and connected to the metal silicide.

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Patent Owner(s)

Patent OwnerAddress
PROMOS TECHNOLOGIES INCHSIN CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
LIN, TSUNG DE TAICHUNG CITY, TW 3 3

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