METHOD FOR HEAT-TREATING SILICON WAFER
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United States of America Patent
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Issued Date -
Jan 14, 2010
app pub date -
Aug 21, 2007
filing date -
Aug 25, 2006
priority date (Note) -
Abandoned
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Abstract
Provided is a heat treatment method wherein generation of slip dislocation in silicon wafer RTP is suppressed, in order to solve a problem of not sufficiently suppressing generation of slip dislocation of silicon wafers in conventional RTP. A step is provided for suspending temperature rising for 10 seconds or longer at a temperature in a range of over 700° C. to below 950° C., so as to prevent generation of slip dislocation during rapid heating, at least at a silicon wafer portion that contacts with a supporting section of a rapid heating apparatus or at a portion on the outermost circumference section of the silicon wafer.
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