INTEGRATED CIRCUIT SYSTEM EMPLOYING SINGLE MASK LAYER TECHNIQUE FOR WELL FORMATION
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United States of America Patent
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N/A
Issued Date -
Jan 14, 2010
app pub date -
Jul 14, 2008
filing date -
Jul 14, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for manufacturing an integrated circuit system that includes: providing a substrate; forming a mask layer over the substrate; implanting a first well through an opening in the mask layer into the substrate; and implanting a second well through the mask layer and the opening via a single implant into the substrate.
First Claim
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