HIGH-VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR WITH SHORTENED SOURCE AND DRAIN
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app pub date -
Aug 31, 2009
filing date -
Nov 22, 2004
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Abstract
A high-voltage metal-oxide-semiconductor (HV MOS) transistor is provided to form the decoder in a source driver of a display apparatus for substantially saving the layout area. The HV MOS transistor includes two doped regions with a first conductivity type disposed in a semiconductor substrate, and a gate region having a second conductivity type opposite to the first conductivity type on the semiconductor substrate and between the doped regions. Accordingly, the layout area could be substantially reduced.
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