GHz Surface Acoustic Resonators in RF-CMOS

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United States of America Patent

SERIAL NO

12405503

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Abstract

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An improved SAW resonator fabricated using RF-CMOS technology is disclosed. The SAW resonator is capable of a resonant frequency of from about 1 GHz to about 3.12 GHz. Several different embodiments namely both single and double port resonators implemented in standard CMOS (0.6 μm) and RF-CMOS (0.18 μm) technologies are presented.

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Patent Owner(s)

Patent OwnerAddress
THE GEORGE WASHINGTON UNIVERSITYRICE HALL SUITE 601 2121 I STREET NW WASHINGTON DC 20052

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nordin, Anis Nurashikin Shah Alam, MY 4 51
Zaghloul, Mona Bethesda, US 10 133

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