SYSTEM AND METHOD FOR DETERMINING IN-LINE INTERFACIAL OXIDE CONTACT RESISTANCE
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United States of America Patent
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Issued Date -
Jan 14, 2010
app pub date -
Dec 3, 2007
filing date -
Dec 3, 2007
priority date (Note) -
Abandoned
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Abstract
The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for measuring in-line contact resistance in relation to oxide formations. The present invention, in one or more implementations, include an in-line method of determining contact resistance across a semiconductor wafer and determining the contact resistance value and the number of monolayers of the wafer.
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