METHOD OF FORMING FLUORINE-CONTAINING DIELECTRIC FILM
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United States of America Patent
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Issued Date -
Jan 7, 2010
app pub date -
Jul 1, 2008
filing date -
Jul 1, 2008
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Abandoned
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Abstract
A method of forming a fluorine-containing dielectric film on a substrate by plasma CVD, includes: introducing as a process gas a fluorinated carbon compound having at least two double bonds in its molecule and an unsaturated hydrocarbon compound into a reaction space wherein a substrate is placed; and applying RF power to the reaction space to deposit a fluorine-containing dielectric film on the substrate by plasma CVD.
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