Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same
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United States of America Patent
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Issued Date -
Jan 7, 2010
app pub date -
Aug 29, 2007
filing date -
Sep 8, 2006
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Abandoned
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Abstract
The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets.
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