INTEGRATED CIRCUIT SYSTEM EMPLOYING A MODIFIED ISOLATION STRUCTURE

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United States of America Patent

APP PUB NO 20090325359A1
SERIAL NO

12165624

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Abstract

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An integrated circuit system that includes: providing a substrate; forming a trench within the substrate; forming a liner on a sidewall of the trench; and forming a dielectric material at a trench bottom with a dielectric width dimension that exceeds that of a width dimension of the trench.

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Patent Owner(s)

Patent OwnerAddress
CHARTERED SEMICONDUCTOR MANUFACTURING LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Jack Singapore, SG 8 129
Goh, Loh Nah Luona Singapore, SG 4 17
Liu, Huang Singapore, SG 123 799
Lu, Wei Singapore, SG 656 6848
Rao, Xuesong Singapore, SG 18 26
Shu, Jeff Singapore, SG 3 11
Tian, Jingze Singapore, SG 4 74
Widodo, Johnny Singapore, SG 31 472

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