NON-VOLATILE MEMORY AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Dec 24, 2009
app pub date -
Apr 23, 2008
filing date -
Nov 1, 2007
priority date (Note) -
Abandoned
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Abstract
A method of manufacturing a non-volatile memory is provided. An insulating layer, a conductive material layer and a polish stop layer are sequentially on a substrate. Trenches are formed in a portion of the substrate, the polish stop layer, the conductive material layer and the insulating layer, and the conductive material layer is segmented to form conductive blocks. A dielectric material layer is formed to cover the polish stop layer and fill the trenches. A chemical mechanical polishing process is performed until exposing a surface of the polish stop layer. A portion of the dielectric layer is removed to form trench isolation structures. A portion of sidewalls of each conductive block is removed to form floating gates. A width of each floating gate is decreased gradually from bottom to top.
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