METHOD FOR FORMING TRENCH ISOLATION
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United States of America Patent
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Issued Date -
Dec 24, 2009
app pub date -
Jun 24, 2008
filing date -
Jun 24, 2008
priority date (Note) -
Abandoned
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Abstract
A method for treating a dielectric material using a gas cluster ion beam (GCIB) is described, and more particularly, a method for infusing material into a dielectric layer using a GCIB is described. The method comprises: filling a trench at least partially with a dielectric material; generating a GCIB; and irradiating the dielectric material with the GCIB to introduce one or more species into the dielectric material to a pre-determined depth.
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