Microcrystalline Silicon Film Forming Method and Solar Cell
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United States of America Patent
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Issued Date -
Dec 24, 2009
app pub date -
Mar 29, 2007
filing date -
Mar 29, 2006
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Abandoned
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Abstract
Object of this invention is to provide a plasma CVD method capable of forming a microcrystalline silicon film at low hydrogen gas flow rate, thereby providing a low-cost microcrystalline silicon solar cell., related to crystalline silicon and amorphous silicon, respectively
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