ALIGNMENT MARK AND METHOD FOR FABRICATING THE SAME AND ALIGNMENT METHOD OF SEMICONDUCTOR
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United States of America Patent
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Issued Date -
Dec 17, 2009
app pub date -
Jun 17, 2008
filing date -
Jun 17, 2008
priority date (Note) -
Abandoned
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Abstract
An alignment mark, disposed on a substrate, is provided. The alignment mark includes a first dielectric layer and a metal layer. The first dielectric layer is disposed on the substrate and includes an alignment trench and a contact hole. The metal layer is disposed in the alignment trench and the contact hole, wherein a surface of the metal layer is even with a surface of the first dielectric layer. Because the metal layer and the first dielectric layer have different reflection indexes and different refraction indexes, an alignment light detects the alignment mark according to these differences.
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