SEMICONDUCTOR PROCESSING
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United States of America Patent
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Issued Date -
Dec 17, 2009
app pub date -
May 11, 2007
filing date -
May 11, 2006
priority date (Note) -
Abandoned
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Abstract
A semiconductor product comprises an insulator layer and a SOI (Silicon On Insulator) layer on the insulator layer, wherein the SOI layer contains implanted Germanium (Ge) at or near the interface with the insulator layer so as to form gettering sites. The semiconductor product can be manufactured by ion implanting Germanium (Ge) into silicon material and bonding the silicon material onto a handle so as to form a SOI substrate.
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