Methods of splitting CdZnTe layers from CdZnTe substrates for the growth of HgCdTe
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United States of America Patent
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Jul 5, 2011
Grant Date -
Dec 10, 2009
app pub date -
Jun 5, 2009
filing date -
Jun 5, 2008
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Abstract
Methods of producing CdZnTe (CZT) layers for the epitaxial growth of HgCdTe thereon include implanting ions into a CZT substrate at a low temperature to form a damaged layer underneath a CZT surface layer, bonding a wafer to the CZT substrate about the CZT surface layer using a bonding material, and, annealing the CZT substrate for a time sufficient to facilitate the splitting of the CZT substrate at the damaged layer from the CZT surface layer.
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