Silicon Film Deposition Method Utilizing a Silent Electric Discharge and an Active Species
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United States of America Patent
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Issued Date -
Dec 10, 2009
app pub date -
May 14, 2009
filing date -
May 14, 2008
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Abandoned
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Abstract
A method for depositing a silicon film on a substrate includes a step of flowing a first silicon-containing gaseous composition through an electric discharge generated to form a second silicon-containing composition that is different than the first silicon-containing composition. The second composition is directed into a deposition chamber to form a silicon-containing film on one or more substrates positioned within the deposition chamber. The formation of crystalline silicon is controlled by the temperature of the deposition. Optionally, an activated hydrogen-containing composition is introduced into the deposition chamber during film deposition. The activated hydrogen-containing composition is formed by exposing hydrogen gas to microwave radiation.
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