METHOD FOR PREPARING INTEGRATED CIRCUIT STRUCTURE WITH POLYMORPHOUS MATERIAL

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United States of America Patent

APP PUB NO 20090298284A1
SERIAL NO

12128434

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Abstract

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A method for preparing an integrated circuit structure performs a deposition process to form a precursor layer on a substrate, and the precursor layer has a phase transition property in a transition temperature region. Subsequently, a first thermal treating process is performed at a first temperature to transform the precursor layer into a polymorphous layer possessing a predetermined crystalline phase, and the first temperature is higher than an upper limit of the temperature of the transition temperature region.

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PROMOS TECHNOLOGIES INCHSIN CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHENG, TZU LUN Taichung City , TW 1 0
CHUANG, DA YU Changhua County , TW 2 0
LEE, WEI HENG Taichung City , TW 2 0
WU, CHENG DA Keelung City , TW 3 0

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