APPARATUS AND METHOD FOR IMPROVING PRODUCTION THROUGHPUT IN CVD CHAMBER
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United States of America Patent
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Issued Date -
Dec 3, 2009
app pub date -
May 30, 2008
filing date -
May 30, 2008
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Abstract
A plasma CVD apparatus for forming a film on a substrate includes: an evacuatable reaction chamber; capacitively-coupled upper and lower electrodes disposed inside the reaction chamber; and an insulator for inhibiting penetration of a magnetic field of radio frequency generated during substrate processing. The insulator is placed on the bottom surface of the reaction chamber under the lower electrode.
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