FILM FORMING SYSTEM AND METHOD FOR FORMING FILM
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United States of America Patent
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Issued Date -
Dec 3, 2009
app pub date -
Mar 10, 2006
filing date -
Mar 16, 2005
priority date (Note) -
Abandoned
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Abstract
An obstruct of this invention is to make it possible to form a metal-oxide film or a metal-nitride film having less oxygen deficit at a high deposition rate with improved repeatability and to downsize a film forming system as well. is made to be both larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.
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