Semiconductor Power Switch
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United States of America Patent
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Issued Date -
Dec 3, 2009
app pub date -
May 5, 2009
filing date -
May 6, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A semiconductor power switch comprises at least a first IGBT and a second IGBT. The collectors of the first and second IGBTs are connected to each other, and the emitters of the first and second IGBTs are connected to each other. The first IGBT is an IGBT type with a comparatively low collector-emitter on-voltage and a comparatively high turn-on or turn-off switching energy. In contrast thereto, the second IGBT is an IGBT type with a comparatively high collector-emitter on-voltage and a comparatively low turn-on or turn-off switching energy. Both IGBTs receive gate signals from a control circuit for switching the power switch on during a first time interval and switching the power switch off during a second time interval. The control circuit is designed to supply an on-signal to the second IGBT during the whole first time interval and another on-signal to the first IGBT during only a part of the first time interval, which is less than the whole.
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