ISOLATION TRENCH INTERSECTION STRUCTURE WITH REDUCED GAP WIDTH
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United States of America Patent
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Issued Date -
Dec 3, 2009
app pub date -
Dec 8, 2006
filing date -
Dec 10, 2005
priority date (Note) -
Abandoned
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Abstract
The invention relates to isolation trenches having a high aspect ratio for trench-insulated smart power technologies in Silicon On Insulator (SOI) silicon wafers. The specific geometric layout of the intersections and junctions of the isolation trenches allows error rate reduction and simplification of manufacture.
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