THIN FILM TRANSISTOR HAVING A COMMON CHANNEL AND SELECTABLE DOPING CONFIGURATION
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United States of America Patent
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Issued Date -
Dec 3, 2009
app pub date -
May 29, 2009
filing date -
May 30, 2008
priority date (Note) -
Abandoned
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Abstract
Methods and apparatus for producing a thin film transistor (TFT) result in: a semiconductor layer; a channel region formed on or in the semiconductor layer and having first and second opposing ends, and having third and fourth opposing ends transverse to the first and second ends; an n-type source structure disposed on or in the semiconductor layer adjacent to the first end of the channel; an n-type drain structure disposed on or in the semiconductor layer adjacent to the second end of the channel; a p-type source structure disposed on or in the semiconductor layer adjacent to the third end of the channel; a p-type drain structure disposed on or in the semiconductor layer adjacent to the fourth end of the channel; and a gate structure disposed over the channel region.
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